Engery Bandgap of P.N Junction Diode
Experiment to plot Reverse saturation current Vs Temperature in reverse biased PN Junction Diode.
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- # 3-B, Durga Nagar, Ambala Cantt-133001, Haryana (India)
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Description
Objective : To plot Reverse saturation current Vs Temperature in reverse biased PN Junction Diode.
Features : Amtech India’ Energy band gap of P.N junction diode characteristics apparatus comprises of DC Regulated Power Supply 0-20 VDC/150mA, two round meters for voltage & Current measurement, one PN Junction Diode (Ge type) is kept in Oven, connections of supplies, Meters & Diode brought out at 4 mm Sockets. Also provided with Oven with temperature control knob.
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