Engery Bandgap of P.N Junction Diode
Experiment to plot Reverse saturation current Vs Temperature in reverse biased PN Junction Diode.
- To pick up today
- # 3-B, Durga Nagar, Ambala Cantt-133001, Haryana (India)
- Free
Description
Objective : To plot Reverse saturation current Vs Temperature in reverse biased PN Junction Diode.
Features : Amtech India’ Energy band gap of P.N junction diode characteristics apparatus comprises of DC Regulated Power Supply 0-20 VDC/150mA, two round meters for voltage & Current measurement, one PN Junction Diode (Ge type) is kept in Oven, connections of supplies, Meters & Diode brought out at 4 mm Sockets. Also provided with Oven with temperature control knob.
- Watch Product Video
More items to explore
Amtech India offers Demorgans theorm kit comprising of a DC Regulated Power Supply 5V / 150mA, ICs placed...
₹0.00
Amtech India Offers Thermistor Characteristics Apparatus to plot negative Resistance co-efficient Characteristics...
₹0.00
Amtech India Offers Vaccum Tube Voltage Ohmmeter (V.T.V.M) for measurement of AC & DC voltages from 1.5...
₹0.00