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Engery Bandgap of P.N Junction Diode - Image 1

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Engery Bandgap of P.N Junction Diode

Experiment to plot Reverse saturation current Vs Temperature in reverse biased PN Junction Diode.

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Description

Objective : To plot Reverse saturation current Vs Temperature in reverse biased PN Junction Diode.
Features : Amtech India’ Energy band gap of P.N junction diode characteristics apparatus comprises of DC Regulated Power Supply 0-20 VDC/150mA, two round meters for voltage & Current measurement, one PN Junction Diode (Ge type) is kept in Oven, connections of supplies, Meters & Diode brought out at 4 mm Sockets. Also provided with Oven with temperature control knob.

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